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RSQ015P10TR - ROHM Semiconductor

Description: P-Channel 100 V 1.5A (Ta) 600mW (Ta) Surface Mount TSMT6 (SC-95)

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RSQ015P10TR - ROHM Semiconductor  - 3D model
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RSQ015P10TR Details

  • Manufacturer Part Number:

    RSQ015P10TR

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    TSMT6, 6 PIN

  • Pin Count:

    6

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    1

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    0.47 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e1

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RSQ015P10TR Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • The maximum allowable power dissipation is 1.5W. Exceeding this limit can cause the device to overheat and potentially fail.
  • Yes, the RSQ015P10TR is suitable for high-frequency applications up to 1GHz. However, the device's performance may degrade at higher frequencies due to parasitic capacitance and inductance.
  • ESD protection can be achieved by using ESD protection diodes, such as the ROHM Semiconductor's ESD protection diode, and following proper handling and storage procedures.

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RSQ015P10TR Overview

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