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RSS070P05HZGTB - ROHM Semiconductor

Description: Pch -45V -7A Power MOSFET

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RSS070P05HZGTB - ROHM Semiconductor PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead sop
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3D Models
RSS070P05HZGTB - ROHM Semiconductor  - 3D model - Small Outline Packages - 8 lead sop
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RSS070P05HZGTB Details

  • Manufacturer Part Number:

    RSS070P05HZGTB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-03-23

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    45 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    330 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    28 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RSS070P05HZGTB Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.
  • The maximum allowable power dissipation is dependent on the ambient temperature and the thermal resistance of the device. According to the datasheet, the maximum power dissipation is 2.5W at 25°C ambient temperature.
  • Yes, the RSS070P05HZGTB is suitable for high-frequency switching applications up to 1MHz. However, the device's performance and reliability may degrade at higher frequencies.
  • ESD protection can be achieved by using ESD protection diodes, such as the ROHM Semiconductor's ESD protection diode, and following proper handling and storage procedures.

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RSS070P05HZGTB Overview

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