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RSS100N03HZGTB - ROHM Semiconductor

Description: Nch 30V 10A Automotive Power MOSFET

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RSS100N03HZGTB - ROHM Semiconductor PCB footprint - Small Outline Packages - Small Outline Packages - 8 lead sop
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3D Models
RSS100N03HZGTB - ROHM Semiconductor  - 3D model - Small Outline Packages - 8 lead sop
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RSS100N03HZGTB Details

  • Manufacturer Part Number:

    RSS100N03HZGTB

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-05-21

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    5.4

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.0189 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    200 pF

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2 W

  • Pulsed Drain Current-Max (IDM):

    40 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RSS100N03HZGTB Frequently Asked Questions (FAQs)

  • The thermal resistance of the RSS100N03HZGTB is typically around 2.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient) when mounted on a standard PCB.
  • Yes, the RSS100N03HZGTB is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and internal gate resistance.
  • To ensure reliability, it's essential to follow the recommended operating conditions, including temperature, voltage, and current ratings. Additionally, consider using a heat sink or thermal management system to keep the junction temperature below 150°C.
  • The recommended gate drive voltage for the RSS100N03HZGTB is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.
  • Yes, the RSS100N03HZGTB can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.

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RSS100N03HZGTB Overview

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