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RUM002N05T2L - ROHM Semiconductor

Description: 1.2V Drive Nch MOSFET

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RUM002N05T2L - ROHM Semiconductor PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - VMT3
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3D Models
RUM002N05T2L - ROHM Semiconductor  - 3D model - SO Transistor Flat Lead - VMT3
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RUM002N05T2L Details

  • Manufacturer Part Number:

    RUM002N05T2L

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    21 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    9

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    50 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    2.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-F3

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.15 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

RUM002N05T2L Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the RUM002N05T2L is -40°C to 150°C.
  • Yes, the RUM002N05T2L is suitable for high-frequency switching applications due to its low gate charge and low output capacitance.
  • The recommended gate resistor value for the RUM002N05T2L is between 10Ω to 100Ω, depending on the specific application and switching frequency.
  • Yes, the RUM002N05T2L can be used in parallel to increase current handling capability, but it is essential to ensure that the devices are properly matched and the layout is designed to minimize current imbalance.
  • The typical turn-on time for the RUM002N05T2L is around 10ns, and the typical turn-off time is around 20ns, depending on the gate resistor value and the specific application.

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RUM002N05T2L Overview

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