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RW1S0BAR030FET - Ohmite

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RW1S0BAR030FET - Ohmite  - 3D model
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RW1S0BAR030FET Details

  • Manufacturer Part Number:

    RW1S0BAR030FET

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    CHIP

  • Reach Compliance Code:

    Unknown

  • Country Of Origin:

    Mexico

  • ECCN Code:

    EAR99

  • HTS Code:

    8533.21.00.80

  • Manufacturer:

    Ohmite Mfg Co

  • YTEOL:

    9

  • Construction:

    Rectangular

  • Mounting Feature:

    SURFACE MOUNT

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Height:

    3.454 mm

  • Package Length:

    6.248 mm

  • Package Style:

    SMT

  • Package Width:

    3.454 mm

  • Packing Method:

    TR, 13 INCH

  • Rated Power Dissipation (P):

    1 W

  • Rated Temperature:

    25 °C

  • Reference Standard:

    UL

  • Resistance:

    0.03 Ω

  • Resistor Type:

    FIXED RESISTOR

  • Size Code:

    2514

  • Surface Mount:

    YES

  • Technology:

    WIRE WOUND

  • Terminal Finish:

    Tin (Sn)

  • Terminal Shape:

    J BEND

  • Tolerance:

    1%

  • Working Voltage:

    50 V

RW1S0BAR030FET Frequently Asked Questions (FAQs)

  • The thermal resistance of the RW1S0BAR030FET is typically around 1.5°C/W, but it's recommended to consult with Ohmite's application engineers for specific thermal design considerations.
  • While the RW1S0BAR030FET is designed for high-power applications, its frequency response is limited to around 100 kHz. For high-frequency applications, Ohmite recommends using their FET series or consulting with their application engineers for alternative solutions.
  • Ohmite provides a recommended PCB layout and thermal management guide for the RW1S0BAR030FET in their application notes. It's essential to follow these guidelines to ensure optimal performance and reliability.
  • The RW1S0BAR030FET has a maximum operating temperature of 150°C. While it can handle high temperatures, it's essential to derate the power dissipation accordingly to ensure reliability and prevent thermal runaway.
  • Yes, the RW1S0BAR030FET can be used in a parallel configuration to increase power handling. However, it's crucial to ensure that the devices are properly matched and that the PCB layout is designed to minimize thermal and electrical mismatch.

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RW1S0BAR030FET Overview

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