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S25FL128LAGMFB000 - Infineon

Description: S25FL128L - (16-MB), 3.0 V FL-L Flash Memory

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S25FL128LAGMFB000 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - S25FL512SAGMFVR11
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S25FL128LAGMFB000 Details

  • Manufacturer Part Number:

    S25FL128LAGMFB000

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOIC-16

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Clock Frequency-Max (fCLK):

    133 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-G16

  • Length:

    10.3 mm

  • Memory Density:

    134217728 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    16

  • Number of Words:

    16777216 words

  • Number of Words Code:

    16000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    16MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP16,.4

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3 V

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    2.65 mm

  • Serial Bus Type:

    QSPI

  • Standby Current-Max:

    0.00003 A

  • Supply Current-Max:

    0.035 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS, 65nm

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    7.5 mm

  • Write Protection:

    HARDWARE

S25FL128LAGMFB000 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the S25FL128LAGMFB000 is 2.7V to 3.6V, as specified in the datasheet. However, it's essential to note that the device can tolerate a voltage range of 2.5V to 3.7V for a short duration, but prolonged operation outside the recommended range may affect its performance and reliability.
  • During power-up, the HOLD# pin should be kept high until the power supply has reached a stable voltage level. During power-down, the HOLD# pin should be kept low to ensure that the device is in a low-power state. It's essential to follow the recommended power-up and power-down sequences to prevent any unexpected behavior or data corruption.
  • The S25FL128LAGMFB000 supports up to 100,000 erase cycles per sector, and up to 10,000 erase cycles per block. It's essential to follow the recommended erase and write cycles to ensure the device's reliability and endurance.
  • Wear leveling and bad block management are essential to ensure the device's reliability and endurance. Implementing a wear leveling algorithm can help distribute the erase cycles evenly across the device. Bad block management involves detecting and replacing faulty blocks to prevent data corruption. Infineon provides guidelines and recommendations for implementing wear leveling and bad block management in their application notes and technical documentation.
  • Infineon recommends using their proprietary programming algorithm and software tools, such as the FlashFX Pro or FlashFX Lite, to program the S25FL128LAGMFB000 during production. These tools provide a reliable and efficient way to program the device, and ensure that the programming process is optimized for the device's architecture and performance.

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