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S25FS064SAGBHI020 - Infineon

Description: S25FS064S - 1.8 V FS-S CMOS Flash

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S25FS064SAGBHI020 Details

  • Manufacturer Part Number:

    S25FS064SAGBHI020

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Clock Frequency-Max (fCLK):

    133 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B24

  • Length:

    8 mm

  • Memory Density:

    67108864 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    24

  • Number of Words:

    8388608 words

  • Number of Words Code:

    8000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    8MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TBGA

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    1.2 mm

  • Serial Bus Type:

    QSPI

  • Supply Voltage-Max (Vsup):

    2 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Type:

    NOR TYPE

  • Width:

    6 mm

  • Write Protection:

    HARDWARE/SOFTWARE

S25FS064SAGBHI020 Frequently Asked Questions (FAQs)

  • The S25FS064SAGBHI020 has an operating temperature range of -40°C to +85°C, with an extended temperature range of -40°C to +105°C for industrial grade devices.
  • The HOLD# pin should be driven low to pause the current operation and enter a low-power state. It should be driven high to resume the operation. Note that HOLD# should not be used during erase or program operations.
  • The WP# (Write Protect) pin is used to protect the status register and the first 256 bytes of the memory array from being written. When WP# is driven low, the protected areas are write-protected. When WP# is driven high, the protected areas can be written.
  • The S25FS064SAGBHI020 has a density of 64 Mbits and is organized as 8192 pages of 8192 bytes each. The device also has 256 bytes of OTP (One-Time Programmable) area.
  • The typical programming time for the S25FS064SAGBHI020 is 1.5 ms per page, with a maximum time of 3 ms per page.

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S25FS064SAGBHI020 Overview

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Flash, 8MX8, PBGA24