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S25HS512TDPBHI010 - Infineon

Description: FLASH - NOR Memory IC 512Mbit SPI - Quad I/O 133 MHz 24-BGA (8x6)

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S25HS512TDPBHI010 Details

  • Manufacturer Part Number:

    S25HS512TDPBHI010

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    12

  • Clock Frequency-Max (fCLK):

    133 MHz

  • Data Retention Time-Min:

    25

  • Endurance:

    1280000 Write/Erase Cycles

  • JESD-30 Code:

    S-PBGA-B24

  • Length:

    8 mm

  • Memory Density:

    536870912 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    24

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VBGA

  • Package Equivalence Code:

    BGA24,5X5,40

  • Package Shape:

    SQUARE

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE

  • Packing Method:

    TRAY

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    1.8 V

  • Seated Height-Max:

    1 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.00034 A

  • Supply Current-Max:

    0.069 mA

  • Supply Voltage-Max (Vsup):

    2 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS, 45 nm

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Type:

    NOR TYPE

  • Width:

    8 mm

  • Write Protection:

    HARDWARE

S25HS512TDPBHI010 Frequently Asked Questions (FAQs)

  • The S25HS512TDPBHI010 has an operating temperature range of -40°C to +125°C, making it suitable for industrial and automotive applications.
  • The hold pin (HOLD#) should be driven low to pause the current operation. When HOLD# is low, the device will pause the current operation and enter a low-power state. When HOLD# is driven high, the operation will resume.
  • The write protection pin (WP#) is used to prevent accidental writes to the device. When WP# is low, the device is write-protected, and when WP# is high, the device is writable.
  • To perform a sector erase operation, send the sector erase command (0x20) followed by the address of the sector to be erased. The device will then erase the entire sector.
  • The typical programming time for the S25HS512TDPBHI010 is around 1.5 ms per 256-byte page, and around 200 ms for a full chip erase.

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