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S28HL512TFPBHI010 - Infineon

Description: Infineon 45-nm MIRRORBIT™ technology that stores two data bits in each memory array cell Sector architecture options Uniform: Address space consists of all 256KB sectors Hybrid: Configuration 1 - Address space consists of thirty-two 4 KB sectors grouped either on the top or the bottom while the remaining sectors are all 256KB Configuration 2 - Address space consists of thirty-two 4 KB sectors equally split between top and bottom while the remaining sectors are all 256KB

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S28HL512TFPBHI010 - Infineon - PCB symbol
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S28HL512TFPBHI010 - Infineon PCB footprint - BGA - BGA - 24-Ball BGA 8.0 mm × 6.0 mm × 1.0 mm (E2A024))
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S28HL512TFPBHI010 - Infineon - 3D model - BGA - 24-Ball BGA 8.0 mm × 6.0 mm × 1.0 mm (E2A024))
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S28HL512TFPBHI010 Details

  • Manufacturer Part Number:

    S28HL512TFPBHI010

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    12

  • Clock Frequency-Max (fCLK):

    166 MHz

  • Data Retention Time-Min:

    25

  • Endurance:

    300000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B24

  • Length:

    8 mm

  • Memory Density:

    536870912 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    24

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VBGA

  • Package Equivalence Code:

    BGA24,5X5,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE

  • Parallel/Serial:

    SERIAL

  • Programming Voltage:

    3 V

  • Seated Height-Max:

    1 mm

  • Serial Bus Type:

    OSPI

  • Standby Current-Max:

    0.000126 A

  • Supply Current-Max:

    0.1 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Type:

    NOR TYPE

  • Width:

    6 mm

  • Write Protection:

    HARDWARE

S28HL512TFPBHI010 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the S28HL512TFPBHI010 is -40°C to +85°C, with a storage temperature range of -65°C to +150°C.
  • The HOLD# signal should be asserted low to pause the current operation and enter a low-power state. De-asserting HOLD# resumes the operation. Note that HOLD# should not be asserted during a write operation, as it may cause data corruption.
  • The WP# signal is used to protect the entire memory array or specific sectors from unintentional writes. When WP# is asserted low, the memory is write-protected. When WP# is de-asserted high, the memory is writable.
  • The optimal clock frequency depends on the specific application and system requirements. The S28HL512TFPBHI010 supports clock frequencies up to 133 MHz. It's recommended to consult the datasheet and application notes for guidance on selecting the appropriate clock frequency.
  • The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. This ensures proper device initialization and prevents latch-up or other issues.

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