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S29GL01GS11FHI010 - Infineon

Description: NOR Flash 1GB, 3V, 110NS Parallel NOR Flash

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PCB Footprints
S29GL01GS11FHI010 - Infineon PCB footprint - BGA - BGA - LAA064—64 ball Fortified Ball Grid Array, 11 x 13 mm_2020
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3D Models
S29GL01GS11FHI010 - Infineon  - 3D model - BGA - LAA064—64 ball Fortified Ball Grid Array, 11 x 13 mm_2020
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S29GL01GS11FHI010 Details

  • Manufacturer Part Number:

    S29GL01GS11FHI010

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Access Time-Max:

    110 ns

  • Command User Interface:

    YES

  • Common Flash Interface:

    YES

  • Data Polling:

    YES

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B64

  • JESD-609 Code:

    e1

  • Length:

    13 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Sectors/Size:

    1024

  • Number of Terminals:

    64

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Equivalence Code:

    BGA64,8X8,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Page Size:

    16 words

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3 V

  • Qualification Status:

    Not Qualified

  • Ready/Busy:

    YES

  • Seated Height-Max:

    1.4 mm

  • Sector Size:

    64K

  • Standby Current-Max:

    0.0001 A

  • Supply Current-Max:

    0.1 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Toggle Bit:

    YES

  • Type:

    NOR TYPE

  • Width:

    11 mm

S29GL01GS11FHI010 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the S29GL01GS11FHI010 is 2.7V to 3.6V.
  • The HOLD# signal should be asserted low to pause the current operation and enter a low-power state. De-asserting HOLD# resumes the operation from where it was paused.
  • The WP# signal is used to protect the entire memory array or specific sectors from being written. When WP# is asserted low, the corresponding sectors or entire memory array are write-protected.
  • The S29GL01GS11FHI010 has a density of 1 Gbit and is organized as 128 M x 8 bits or 64 M x 16 bits.
  • The S29GL01GS11FHI010 supports up to 100,000 erase cycles per sector.

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S29GL01GS11FHI010 Overview

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