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S29GL01GT12TFN010 - Infineon

Description: NOR Flash Nor

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S29GL01GT12TFN010 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 56-Pin Thin Small Outline Package (TSOP), 14 x 20 mm
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S29GL01GT12TFN010 - Infineon  - 3D model - Small Outline Packages - 56-Pin Thin Small Outline Package (TSOP), 14 x 20 mm
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S29GL01GT12TFN010 Details

  • Manufacturer Part Number:

    S29GL01GT12TFN010

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Access Time-Max:

    120 ns

  • JESD-30 Code:

    R-PDSO-G56

  • JESD-609 Code:

    e3

  • Length:

    18.4 mm

  • Memory Density:

    1073741824 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    56

  • Number of Words:

    67108864 words

  • Number of Words Code:

    64000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    64MX16

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Parallel/Serial:

    PARALLEL

  • Programming Voltage:

    2.7 V

  • Seated Height-Max:

    1.2 mm

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    AUTOMOTIVE

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Width:

    14 mm

S29GL01GT12TFN010 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the S29GL01GT12TFN010 is 2.7V to 3.6V.
  • The HOLD# signal should be asserted low to pause the current operation and de-asserted high to resume the operation. It's recommended to use the HOLD# signal only during read operations.
  • The WP# signal is used to protect the entire memory array or specific sectors from being written. When WP# is asserted low, the memory is write-protected.
  • The S29GL01GT12TFN010 is a 128Mb (16MB) flash memory device, organized as 2,097,152 words of 16 bits each.
  • The S29GL01GT12TFN010 has a minimum of 100,000 erase cycles per sector, and a maximum of 1,000,000 erase cycles per device.

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S29GL01GT12TFN010 Overview

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