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S29GL128S11FHBV20 - Infineon

Description: NOR Flash PNOR

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PCB Footprints
S29GL128S11FHBV20 - Infineon PCB footprint - BGA - BGA - (LAA064) 13 mm x 11 mm
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3D Models
S29GL128S11FHBV20 - Infineon  - 3D model - BGA - (LAA064) 13 mm x 11 mm
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S29GL128S11FHBV20 Details

  • Manufacturer Part Number:

    S29GL128S11FHBV20

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Access Time-Max:

    110 ns

  • Command User Interface:

    YES

  • Common Flash Interface:

    YES

  • Data Polling:

    YES

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B64

  • JESD-609 Code:

    e1

  • Length:

    13 mm

  • Memory Density:

    134217728 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Sectors/Size:

    128

  • Number of Terminals:

    64

  • Number of Words:

    8388608 words

  • Number of Words Code:

    8000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    8MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Equivalence Code:

    BGA64,8X8,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Page Size:

    16 words

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3 V

  • Ready/Busy:

    YES

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.4 mm

  • Sector Size:

    64K

  • Standby Current-Max:

    0.0002 A

  • Supply Current-Max:

    0.1 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Toggle Bit:

    YES

  • Type:

    NOR TYPE

  • Width:

    11 mm

S29GL128S11FHBV20 Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the S29GL128S11FHBV20 is 2.7V to 3.6V.
  • The HOLD# signal should be asserted low to suspend the current operation and enter a low-power state. De-asserting HOLD# resumes the operation from where it was suspended.
  • The WEL bit is used to enable or disable write operations to the device. When WEL is set to 1, write operations are enabled, and when it's set to 0, write operations are disabled.
  • To perform a sector erase operation, send the Sector Erase command (0x30) followed by the sector address. The device will then erase the entire sector.
  • The S29GL128S11FHBV20 supports up to 100,000 erase cycles per sector.

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Part Image S29GL128S11FHBV20 Cypress Semiconductor

Flash, 16MX8, 110ns, PBGA64