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S29GL512S11DHB020 - Infineon

Description: NOR Flash Parallel 3V/3.3V 512M-bit 32M x 16 110ns Automotive 64-Pin Fortified BGA Tray

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S29GL512S11DHB020 - Infineon PCB footprint - BGA - BGA - LAE064—64-ball Fortified Ball Grid Array (FBGA), 9 × 9 mm
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S29GL512S11DHB020 - Infineon  - 3D model - BGA - LAE064—64-ball Fortified Ball Grid Array (FBGA), 9 × 9 mm
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S29GL512S11DHB020 Details

  • Manufacturer Part Number:

    S29GL512S11DHB020

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Access Time-Max:

    110 ns

  • Command User Interface:

    YES

  • Common Flash Interface:

    YES

  • Data Polling:

    YES

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    S-PBGA-B64

  • JESD-609 Code:

    e1

  • Length:

    9 mm

  • Memory Density:

    536870912 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Sectors/Size:

    512

  • Number of Terminals:

    64

  • Number of Words:

    33554432 words

  • Number of Words Code:

    32000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    32MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Equivalence Code:

    BGA64,8X8,40

  • Package Shape:

    SQUARE

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Page Size:

    16 words

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3 V

  • Ready/Busy:

    YES

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.4 mm

  • Sector Size:

    64K

  • Standby Current-Max:

    0.0002 A

  • Supply Current-Max:

    0.1 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Toggle Bit:

    YES

  • Type:

    NOR TYPE

  • Width:

    9 mm

S29GL512S11DHB020 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the S29GL512S11DHB020 is -40°C to +85°C.
  • The HOLD# signal should be asserted low to pause the current operation and de-asserted high to resume the operation. During hold, the device will tri-state its outputs and ignore any input signals.
  • The WP# signal is used to protect the entire memory array or specific sectors from being written or erased. When WP# is asserted low, the corresponding sectors or entire array are write-protected.
  • The device provides a status register (SR) that can be read to determine the status of the device during an operation. The SR indicates the completion or failure of the operation, as well as any errors that may have occurred.
  • The recommended power-up sequence is to apply VCC first, followed by VPP (if used), and then the clock signal. The device should be in a reset state (RESET# asserted low) during power-up.

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Part Image S29GL512S11DHB020 Cypress Semiconductor

Flash, 64MX8, 110ns, PBGA64