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S29GL512S11TFI020 - Infineon

Description: Cypress Semiconductor S29GL512S11TFI020, CFI, Parallel 512Mbit Flash Memory, 110ns; 3V, TSOP, 56-Pin

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S29GL512S11TFI020 - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - 56-Pin TSOP 14 x 20mm
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S29GL512S11TFI020 - Infineon  - 3D model - Small Outline Packages - 56-Pin TSOP 14 x 20mm
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S29GL512S11TFI020 Details

  • Manufacturer Part Number:

    S29GL512S11TFI020

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Access Time-Max:

    110 ns

  • Command User Interface:

    YES

  • Common Flash Interface:

    YES

  • Data Polling:

    YES

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-G56

  • JESD-609 Code:

    e3

  • Length:

    18.4 mm

  • Memory Density:

    536870912 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Sectors/Size:

    512

  • Number of Terminals:

    56

  • Number of Words:

    33554432 words

  • Number of Words Code:

    32000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    32MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TSSOP

  • Package Equivalence Code:

    TSSOP56,.78,20

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

  • Page Size:

    16 words

  • Parallel/Serial:

    PARALLEL

  • Programming Voltage:

    3 V

  • Qualification Status:

    Not Qualified

  • Ready/Busy:

    YES

  • Seated Height-Max:

    1.2 mm

  • Sector Size:

    64K

  • Standby Current-Max:

    0.0001 A

  • Supply Current-Max:

    0.1 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    0.5 mm

  • Terminal Position:

    DUAL

  • Toggle Bit:

    YES

  • Type:

    NOR TYPE

  • Width:

    14 mm

S29GL512S11TFI020 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the S29GL512S11TFI020 is -40°C to +85°C.
  • The HOLD# signal should be asserted low to pause the current operation and de-asserted high to resume the operation. During hold, the device will tri-state its outputs and ignore any input signals.
  • The WP# signal is used to prevent accidental writes to the device. When WP# is asserted low, the device will ignore any write commands and protect the data from being modified.
  • The S29GL512S11TFI020 is a 512 Mbit (64 M x 8) flash memory device, organized as 64 blocks of 8,192 x 8 bits each.
  • The typical programming time for the S29GL512S11TFI020 is 10-15 seconds for a full chip erase and 2-3 seconds for a single sector erase.

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