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S70GL02GT11FHA010 - Infineon

Description: 2-Gbit (256-MB) 3.0 V Flash Memory

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PCB Footprints
S70GL02GT11FHA010 - Infineon PCB footprint - BGA - BGA - LAA064—64 ball Fortified Ball Grid Array, 11 x 13 mm
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3D Models
S70GL02GT11FHA010 - Infineon  - 3D model - BGA - LAA064—64 ball Fortified Ball Grid Array, 11 x 13 mm
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S70GL02GT11FHA010 Details

  • Manufacturer Part Number:

    S70GL02GT11FHA010

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    10

  • Access Time-Max:

    110 ns

  • Alternate Memory Width:

    8

  • Command User Interface:

    NO

  • Common Flash Interface:

    Y

  • Data Polling:

    YES

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PBGA-B64

  • Length:

    13 mm

  • Memory Density:

    2147483648 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Sectors/Size:

    2K

  • Number of Terminals:

    64

  • Number of Words:

    134217728 words

  • Number of Words Code:

    128000000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    128MX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    LBGA

  • Package Equivalence Code:

    BGA64,8X8,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, LOW PROFILE

  • Page Size:

    16/32 words

  • Parallel/Serial:

    PARALLEL

  • Programming Voltage:

    3 V

  • Ready/Busy:

    YES

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1.4 mm

  • Sector Size:

    128K

  • Standby Current-Max:

    0.0002 A

  • Supply Current-Max:

    0.16 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.7 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Toggle Bit:

    NO

  • Type:

    NOR TYPE

  • Width:

    11 mm

S70GL02GT11FHA010 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the S70GL02GT11FHA010 is -40°C to 85°C.
  • The hold signal (HOLD#) should be asserted low to pause the current operation and de-asserted high to resume the operation. During hold, the device will tri-state its outputs and ignore any further input signals.
  • The write protect (WP#) signal is used to prevent accidental writes to the device. When WP# is asserted low, the device will ignore any write commands and protect the contents of the memory.
  • The S70GL02GT11FHA010 is a 2Gb (256MB) flash memory device, organized as 2048 blocks of 128KB each, with 8192 bytes per page.
  • The typical programming time for the S70GL02GT11FHA010 is 3-5ms per 256-byte page, and 20-30ms for a full chip erase.

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