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S70KS1282GABHB020 - Infineon

Description: DRAM Nor

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S70KS1282GABHB020 - Infineon - PCB symbol
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S70KS1282GABHB020 - Infineon PCB footprint - BGA - BGA - 24-Ball 6x8 mm (FAB024)-
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S70KS1282GABHB020 - Infineon - 3D model - BGA - 24-Ball 6x8 mm (FAB024)-
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S70KS1282GABHB020 Details

  • Manufacturer Part Number:

    S70KS1282GABHB020

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.02

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Clock Frequency-Max (fCLK):

    200 MHz

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B24

  • Length:

    8 mm

  • Memory Density:

    134217728 bit

  • Memory IC Type:

    PSEUDO STATIC RAM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Ports:

    1

  • Number of Terminals:

    24

  • Number of Words:

    16777216 words

  • Number of Words Code:

    16000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    105 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    16MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    VBGA

  • Package Equivalence Code:

    BGA24,5X5,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, VERY THIN PROFILE

  • Screening Level:

    AEC-Q100

  • Seated Height-Max:

    1 mm

  • Self Refresh:

    YES

  • Standby Current-Max:

    0.00066 A

  • Supply Current-Max:

    0.05 mA

  • Supply Voltage-Max (Vsup):

    2 V

  • Supply Voltage-Min (Vsup):

    1.7 V

  • Supply Voltage-Nom (Vsup):

    1.8 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Width:

    6 mm

S70KS1282GABHB020 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the S70KS1282GABHB020 is -40°C to 125°C, as specified in the datasheet. However, it's essential to note that the device can tolerate a wider temperature range during storage, which is -55°C to 150°C.
  • The power-up and power-down sequences for the S70KS1282GABHB020 should be handled carefully to prevent damage to the device. It's recommended to follow the sequence specified in the datasheet, which involves powering up the VCC supply before the VPP supply, and powering down the VPP supply before the VCC supply.
  • The maximum allowed voltage for the VPP pin is 12.5V. Exceeding this voltage can cause permanent damage to the device. The VPP voltage affects the device's programming and erase operations, and using a voltage higher than the recommended maximum can lead to unreliable programming or erase failures.
  • To ensure reliable data retention in the S70KS1282GABHB020, it's essential to follow the recommended storage conditions, including temperature and humidity. In high-temperature environments, it's crucial to implement adequate cooling mechanisms and ensure that the device operates within the recommended temperature range. Additionally, regular data refreshes can help maintain data integrity.
  • The S70KS1282GABHB020 is not specifically designed for radiation-intensive environments. However, Infineon Technologies AG provides radiation-tolerant versions of the device, such as the S70KS1282GABHB020-R, which are designed to withstand radiation exposure. It's essential to consult with Infineon's technical support team to determine the best solution for specific radiation-intensive applications.

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