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SBAS20LT1G - onsemi

Description: Pb-Free Package is Available.; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable

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Symbol
SBAS20LT1G - onsemi - PCB symbol
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PCB Footprints
SBAS20LT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SOT−23 (TO−236)2
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3D Models
SBAS20LT1G - onsemi - 3D model - SOT23 (3-Pin) - SOT−23 (TO−236)2
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SBAS20LT1G Details

  • Manufacturer Part Number:

    SBAS20LT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.70

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.12

  • Application:

    GENERAL PURPOSE

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • Forward Voltage-Max (VF):

    1 V

  • JEDEC-95 Code:

    TO-236AB

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    0.625 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    0.2 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Power Dissipation-Max:

    0.225 W

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    200 V

  • Reverse Recovery Time-Max:

    0.05 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SBAS20LT1G Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended. Additionally, vias should be placed under the package to connect the thermal pad to the copper area.
  • Ensure that the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C. Implement a robust thermal management system, and consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The SBAS20LT1G has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.
  • Yes, the SBAS20LT1G is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly decoupled and that the PCB layout is optimized for high-frequency operation.
  • The optimal gate resistor value depends on the specific application and switching frequency. A general guideline is to use a value between 10 Ω to 100 Ω. A higher value can reduce EMI, but may increase switching losses.

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SBAS20LT1G Overview

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SBAS20LT1G Alternates

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Part Image BAS20LT3G onsemi

Rectifier Diode, 1 Phase, 1 Element, 0.2A, 200V V(RRM), Silicon, TO-236AB