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SBC856BWT1G - onsemi

Description: Device Marking: BC856AWT1 = 3A BC856BWT1 = 3B BC857AWT1 = 3E BC857BWT1 = 3F BC858AWT1 = 3J BC858BWT1 = 3K BC858CWT1 = 3L; Pb-Free Packages are Available; S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

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PCB Footprints
SBC856BWT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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3D Models
SBC856BWT1G - onsemi  - 3D model - SOT23 (3-Pin) - SC-70 (SOT-323) CASE419-04
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SBC856BWT1G Details

  • Manufacturer Part Number:

    SBC856BWT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SC-70 (SOT-323) 3 LEAD

  • Package Description:

    HALOGEN FREE AND ROHS COMPLIANT, 419-04, SC-70, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    419-04

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Base Capacitance-Max:

    4.5 pF

  • Collector-Emitter Voltage-Max:

    65 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    220

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.65 V

SBC856BWT1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the SBC856BWT1G is -40°C to 125°C.
  • To ensure reliability, it is recommended to follow the thermal design guidelines provided in the datasheet, including proper heat sinking and thermal management.
  • The maximum allowed voltage for the SBC856BWT1G is 1.5V, with a recommended operating voltage range of 1.2V to 1.35V.
  • The power sequencing for the SBC856BWT1G should follow the recommended power-up and power-down sequences outlined in the datasheet to prevent damage to the device.
  • The recommended PCB layout and routing for the SBC856BWT1G should follow the guidelines provided in the datasheet, including proper decoupling, signal routing, and power distribution.

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SBC856BWT1G Overview

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