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SBCP56-16T1G - onsemi

Description: Collector current, IC = of 1.0 Amp; The SOT-223 package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die; S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

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PCB Footprints
SBCP56-16T1G - onsemi PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE N
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3D Models
SBCP56-16T1G - onsemi  - 3D model - SOT223 (3-Pin) - SOT−223 (TO−261) CASE 318E−04 ISSUE N
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SBCP56-16T1G Details

  • Manufacturer Part Number:

    SBCP56-16T1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-223 (TO-261) 4 LEAD

  • Pin Count:

    4

  • Manufacturer Package Code:

    0.0318

  • Country Of Origin:

    Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    11 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    4

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    80 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PDSO-G4

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.5 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    130 MHz

SBCP56-16T1G Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for SBCP56-16T1G is -40°C to 125°C.
  • To ensure reliable operation in high-temperature environments, it is recommended to use a heat sink and ensure good thermal conductivity between the device and the heat sink. Additionally, reducing the power consumption and minimizing the thermal resistance can help to reduce the junction temperature.
  • The maximum allowable voltage for SBCP56-16T1G is 16V. Exceeding this voltage may cause permanent damage to the device.
  • To handle ESD protection for SBCP56-16T1G, it is recommended to use ESD protection devices such as TVS diodes or ESD protection arrays at the input/output pins. Additionally, following proper handling and storage procedures can help to prevent ESD damage.
  • The recommended storage temperature range for SBCP56-16T1G is -40°C to 150°C.

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SBCP56-16T1G Overview

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Part Image SBCP56-16T3G onsemi

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin