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SCT018W65G3-4AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package

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SCT018W65G3-4AG - STMicroelectronics - PCB symbol
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PCB Footprints
SCT018W65G3-4AG - STMicroelectronics PCB footprint - Other - Other - HiP247-4 _2024
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3D Models
SCT018W65G3-4AG - STMicroelectronics - 3D model - Other - HiP247-4 _2024
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SCT018W65G3-4AG Details

  • Manufacturer Part Number:

    SCT018W65G3-4AG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    55 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    20 pF

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    398 W

  • Pulsed Drain Current-Max (IDM):

    323 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT018W65G3-4AG Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a PCB layout with a thermal pad connected to a large copper area on the bottom layer, and multiple vias to dissipate heat efficiently.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider derating the device's power dissipation according to the temperature derating curve.
  • The maximum allowed voltage on the gate driver input is 20V, as specified in the datasheet. Exceeding this voltage may damage the device.
  • Yes, the SCT018W65G3-4AG is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and layout parasitics to ensure reliable operation.
  • To protect the device from overcurrent and overvoltage conditions, it's recommended to use external protection circuits, such as overcurrent protection (OCP) and overvoltage protection (OVP) circuits, in addition to the device's internal protection features.

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SCT018W65G3-4AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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