Part Image

SCT025W120G3-4AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package

Download SCT025W120G3-4AG Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
SCT025W120G3-4AG - STMicroelectronics PCB footprint - Other - Other - SCT025W120G3-4AG-1
click to zoom
3D Models
SCT025W120G3-4AG - STMicroelectronics  - 3D model - Other - SCT025W120G3-4AG-1
click to zoom

SCT025W120G3-4AG Details

  • Manufacturer Part Number:

    SCT025W120G3-4AG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    56 A

  • Drain-source On Resistance-Max:

    0.037 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    389 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT025W120G3-4AG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCT025W120G3-4AG is -40°C to 125°C.
  • To ensure safe operation during overvoltage conditions, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the thyristor to its maximum rated value.
  • The recommended gate current for reliable triggering of the SCT025W120G3-4AG is typically in the range of 10-50 mA, depending on the specific application and operating conditions.
  • The SCT025W120G3-4AG is not suitable for high-frequency switching applications due to its relatively high switching time (tq) and limited di/dt capability. It is recommended for low-to-medium frequency applications.
  • To protect the SCT025W120G3-4AG from EMI, use a shielded cable or a twisted pair for the gate signal, and consider adding an EMI filter or a common-mode choke to the circuit.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SCT025W120G3-4AG Overview

Use the download button to access the SCT025W120G3-4AG schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SCT02, or try a keyword search, such as Power Field-Effect Transistors

About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

Parts related to SCT025W120G3-4AG

Showing 0 results