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SCT070W120G3-4AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package

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SCT070W120G3-4AG - STMicroelectronics PCB footprint - Other - Other - HiP247-4 _2023
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SCT070W120G3-4AG - STMicroelectronics  - 3D model - Other - HiP247-4 _2023
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SCT070W120G3-4AG Details

  • Manufacturer Part Number:

    SCT070W120G3-4AG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.087 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    236 W

  • Pulsed Drain Current-Max (IDM):

    116 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT070W120G3-4AG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCT070W120G3-4AG is -40°C to 125°C.
  • To ensure safe operation during overvoltage conditions, use a voltage clamp or a surge absorber to limit the voltage across the thyristor to its maximum rated value (1200V).
  • The recommended gate current for reliable triggering of the SCT070W120G3-4AG is typically in the range of 100-200 mA, depending on the specific application and operating conditions.
  • While the SCT070W120G3-4AG can be used in high-frequency switching applications, its switching frequency is limited to around 1 kHz due to its relatively high turn-on and turn-off times. For higher frequency applications, consider using a faster thyristor or a different type of power semiconductor.
  • To protect the SCT070W120G3-4AG from EMI, use a shielded cable or a twisted pair for the gate signal, and ensure that the thyristor is properly grounded and decoupled from the power supply and load.

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SCT070W120G3-4AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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