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SCT070W120G3AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247 package

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SCT070W120G3AG - STMicroelectronics - PCB symbol
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SCT070W120G3AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HIP247_2023
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SCT070W120G3AG - STMicroelectronics - 3D model - Transistor Outline, Vertical - HIP247_2023
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SCT070W120G3AG Details

  • Manufacturer Part Number:

    SCT070W120G3AG

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Italy, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    9

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.087 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    236 W

  • Pulsed Drain Current-Max (IDM):

    116 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT070W120G3AG Frequently Asked Questions (FAQs)

  • STMicroelectronics recommends a PCB layout with a large copper area connected to the drain pad to dissipate heat efficiently. A minimum of 2 oz copper thickness is recommended, and the copper area should be connected to a heat sink or a thermal pad.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal management guidelines, including proper heat sinking, thermal interface materials, and airflow. Additionally, consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • STMicroelectronics recommends using a gate drive circuit with a low impedance output stage to ensure fast switching times and low power losses. A gate drive voltage of 12-15V is recommended, and the gate drive circuit should be designed to provide a peak current of at least 1A.
  • To protect the device from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode in parallel with the device. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • To protect the device from electrostatic discharge (ESD), STMicroelectronics recommends using ESD protection devices such as TVS diodes or ESD protection arrays at the input and output pins. Additionally, follow proper handling and storage procedures to prevent ESD damage.

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SCT070W120G3AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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