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SCT1000N170AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 1700 V, 1.0 Ohm typ., 7 A in an HiP247 package

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SCT1000N170AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HIP247_2023
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SCT1000N170AG - STMicroelectronics  - 3D model - Transistor Outline, Vertical - HIP247_2023
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SCT1000N170AG Details

  • Manufacturer Part Number:

    SCT1000N170AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-05-28

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1700 V

  • Drain Current-Max (ID):

    7 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3.4 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    96 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT1000N170AG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCT1000N170AG is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's performance at higher temperatures to ensure reliability and longevity.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, ensure that the gate-source voltage (Vgs) is within the recommended range (typically ±20V) and that the drain-source voltage (Vds) is within the maximum rating (170V).
  • For optimal thermal management, use a PCB with a thermal pad and ensure good thermal conductivity between the device and the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductances and capacitances. Refer to STMicroelectronics' application notes and layout guidelines for more information.
  • Handle the device with ESD-protective equipment and follow proper ESD handling procedures. Ensure that the device is stored in an ESD-protected environment and that all equipment and tools used during assembly and testing are ESD-compliant.
  • The recommended gate drive circuits and components depend on the specific application and requirements. However, a typical gate drive circuit consists of a gate driver IC, a bootstrap diode, and a gate resistor. Refer to STMicroelectronics' application notes and gate drive circuit examples for more information.

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SCT1000N170AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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