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SCT10N120 - STMicroelectronics

Description: MOSFET Silicon carbide Power MOSFET 1200 V, 10 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 package

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SCT10N120 - STMicroelectronics - PCB symbol
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PCB Footprints
SCT10N120 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HiP247_2022
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3D Models
SCT10N120 - STMicroelectronics - 3D model - Transistor Outline, Vertical - HiP247_2022
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SCT10N120 Details

  • Manufacturer Part Number:

    SCT10N120

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    HiP247 IN LINE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.69 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT10N120 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the SCT10N120 is not explicitly stated in the datasheet. However, STMicroelectronics provides an SOA curve in the application note AN440, which can be used to determine the maximum safe operating area for the device.
  • To ensure proper thermal management, it is recommended to attach a heat sink to the device and ensure good thermal contact. The thermal resistance of the heat sink and the thermal interface material should be minimized. Additionally, the device should be operated within the recommended temperature range to prevent overheating.
  • The recommended gate drive voltage for the SCT10N120 is between 10V and 15V. A higher gate drive voltage can improve the device's switching performance, but it may also increase the power consumption and electromagnetic interference (EMI).
  • To protect the SCT10N120 from electrostatic discharge (ESD), it is recommended to handle the device in an ESD-protected environment, use ESD-protected packaging and storage, and ensure that all equipment and tools used to handle the device are properly grounded.
  • The maximum allowed voltage transient for the SCT10N120 is not explicitly stated in the datasheet. However, it is recommended to limit the voltage transient to less than 20% of the maximum rated voltage to prevent damage to the device.

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SCT10N120 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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