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SCT10N120AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package

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SCT10N120AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - GA342DR7GF102KW02L
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SCT10N120AG - STMicroelectronics  - 3D model - Transistor Outline, Vertical - GA342DR7GF102KW02L
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SCT10N120AG Details

  • Manufacturer Part Number:

    SCT10N120AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.69 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    9 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT10N120AG Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the SCT10N120AG is 100 kHz, but it can be used up to 200 kHz with some derating.
  • To ensure proper cooling, make sure to attach a heat sink to the device, and ensure good airflow around the device. The thermal resistance of the device is 1.5°C/W, so a heat sink with a thermal resistance of 1°C/W or lower is recommended.
  • The maximum voltage that can be applied to the gate of the SCT10N120AG is ±20V, but it's recommended to keep it between -5V and +15V for reliable operation.
  • To protect the SCT10N120AG from overvoltage and overcurrent, use a voltage regulator to limit the voltage to the recommended maximum, and use a current limiter or fuse to prevent excessive current. Additionally, consider using a TVS diode or varistor to protect against voltage spikes.
  • The recommended gate resistor value for the SCT10N120AG is between 10Ω and 100Ω, depending on the specific application and switching frequency.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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