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SCT2160KEGC11 - ROHM Semiconductor

Description: N-Channel 1200 V 22A (Tc) 165W (Tc) Through Hole TO-247N

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SCT2160KEGC11 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247N
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SCT2160KEGC11 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247N
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SCT2160KEGC11 Details

  • Manufacturer Part Number:

    SCT2160KEGC11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247N, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    24 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    6

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.208 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    165 W

  • Pulsed Drain Current-Max (IDM):

    55 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT2160KEGC11 Frequently Asked Questions (FAQs)

  • A thermal pad is recommended under the IC to improve heat dissipation. A 2-layer or 4-layer PCB with a thermal relief pattern is also recommended to reduce thermal resistance.
  • To ensure stable operation, use an output capacitor with an ESR of 10mΩ or less. Additionally, add a 1-10nF ceramic capacitor in parallel with the output capacitor to improve stability.
  • The maximum allowed voltage on the EN pin is 6V. Exceeding this voltage may damage the IC.
  • The output voltage ripple can be calculated using the formula: ΔVout = (Iout x Rcoil) / (L x fsw), where Iout is the output current, Rcoil is the coil resistance, L is the inductance, and fsw is the switching frequency.
  • A 10-22uF ceramic or electrolytic capacitor with a voltage rating of 10-16V is recommended for the input capacitor. The capacitor should be placed as close to the IC as possible.

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Part Image SCT2160KE ROHM Semiconductor

Power Field-Effect Transistor, 22A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Part Image SCT2160KEC11 ROHM Semiconductor

Power Field-Effect Transistor, 22A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247