Please enter a minimum 3 letters or numbers
Technical Content
Part Image

SCT2450KEC - ROHM Semiconductor

Description: ROHM SCT2450KEC N-channel MOSFET Transistor, 10 A, 1200 V, 3-Pin TO-247

Download SCT2450KEC Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
SCT2450KEC - ROHM Semiconductor - PCB symbol
click to zoom
PCB Footprints
SCT2450KEC - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247_5 TSQ50210_TO-247_Rev1
click to zoom
3D Models
SCT2450KEC - ROHM Semiconductor - 3D model - Transistor Outline, Vertical - TO-247_5 TSQ50210_TO-247_Rev1
click to zoom

SCT2450KEC Details

  • Manufacturer Part Number:

    SCT2450KEC

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    0.585 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    25 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT2450KEC Frequently Asked Questions (FAQs)

  • A thermal pad on the bottom of the package should be connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended.
  • The SCT2450KEC requires a stable input voltage (VIN) between 4.5V to 18V, and a bypass capacitor (e.g., 10uF) should be placed close to the VIN pin to reduce noise and ensure stable operation.
  • The maximum power dissipation for the SCT2450KEC is 2.5W. Exceeding this limit may cause the device to overheat and reduce its lifespan.
  • The SCT2450KEC is rated for operation up to 125°C (TJ). However, the device's performance and lifespan may be affected at high temperatures. Ensure proper heat sinking and thermal management to maintain optimal performance.
  • Handle the device by the body or use an anti-static wrist strap to prevent ESD damage. Ensure the PCB design includes ESD protection components, such as TVS diodes or ESD arrays, to protect the device from external ESD events.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

SCT2450KEC Overview

Use the download button to access the SCT2450KEC schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like SCT24, or try a keyword search, such as Power Field-Effect Transistors

Parts related to SCT2450KEC

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑

SCT2450KEC Alternates

Showing results

Image Part Number Model
Part Image SCT2450KEHRC11 ROHM Semiconductor

Power Field-Effect Transistor, 10A I(D), 1200V, 0.585ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247
Part Image SCT2450KEGC11 ROHM Semiconductor

Power Field-Effect Transistor, 10A I(D), 1200V, 0.585ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247