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SCT3080ALHRC11 - ROHM Semiconductor

Description: MOSFET 650V 30A 134W SIC 80mOhm TO-247N

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PCB Footprints
SCT3080ALHRC11 - ROHM Semiconductor PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247N_2
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3D Models
SCT3080ALHRC11 - ROHM Semiconductor  - 3D model - Transistor Outline, Vertical - TO-247N_2
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SCT3080ALHRC11 Details

  • Manufacturer Part Number:

    SCT3080ALHRC11

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    27 Weeks

  • Date Of Intro:

    2018-12-11

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.104 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    19 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    265

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    134 W

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT3080ALHRC11 Frequently Asked Questions (FAQs)

  • ROHM recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a dedicated heat sink.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended operating conditions, including the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink, and ensure good airflow around the device. ROHM also recommends derating the power dissipation according to the ambient temperature.
  • ROHM recommends a soldering profile with a peak temperature of 260°C, and a dwell time of 10-30 seconds above 220°C. The device is compatible with lead-free soldering, and ROHM suggests following the JEDEC J-STD-020 standard for reflow soldering.
  • To prevent damage, store the devices in their original packaging, away from direct sunlight, moisture, and extreme temperatures. During shipping, use anti-static packaging materials, and avoid bending or flexing the leads. ROHM also recommends following the EIA/JESD625 standard for handling and storage of semiconductor devices.
  • ROHM recommends characterizing the device under the following test conditions: Vcc = 5V, Ta = 25°C, and RL = 10kΩ. Additionally, use a low-inductance test fixture, and ensure proper decoupling of the power supply lines.

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