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SCT3080KLGC11 - ROHM Semiconductor

Description: MOSFET N-Channel 31A 1200V SiC TO-247

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SCT3080KLGC11 Details

  • Manufacturer Part Number:

    SCT3080KLGC11

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-247N, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    27 Weeks

  • Date Of Intro:

    2017-03-13

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    8

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.104 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    265

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    77 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT3080KLGC11 Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended for optimal thermal performance. The thermal pad should be connected to a large copper area to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a proper bias voltage (VCC) to operate optimally. Ensure that VIN is within the recommended range (4.5V to 18V) and VCC is set to 5V ± 10% for optimal performance.
  • The maximum allowable power dissipation for the SCT3080KLGC11 is 2.5W. Ensure that the device is properly heat-sinked and the ambient temperature is within the recommended range (–40°C to 125°C) to prevent overheating.
  • Use a voltage regulator to regulate the input voltage (VIN) and add overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage to the device. A fuse or a polyfuse can be used to limit the current in case of an overcurrent condition.
  • The SCT3080KLGC11 is designed to operate at frequencies up to 1MHz. However, the optimal operating frequency range is between 100kHz to 500kHz for maximum efficiency and performance.

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SCT3080KLGC11 Overview

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Part Image SCT3080KLC11 ROHM Semiconductor

Power Field-Effect Transistor, 31A I(D), 1200V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247