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SCT30N120 - STMicroelectronics

Description: Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package

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PCB Footprints
SCT30N120 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HIP247_2023
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3D Models
SCT30N120 - STMicroelectronics  - 3D model - Transistor Outline, Vertical - HIP247_2023
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SCT30N120 Details

  • Manufacturer Part Number:

    SCT30N120

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • Drain Current-Max (ID):

    40 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Operating Temperature-Max:

    200 °C

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    270 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

SCT30N120 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the SCT30N120 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and voltage (Vds) ratings. For the SCT30N120, the maximum Tj is 175°C and the maximum Vds is 120V. Engineers should consult the application notes and thermal modeling tools to determine the SOA for their specific use case.
  • To minimize switching losses, the SCT30N120 should be driven with a high-current, low-impedance gate driver that can provide a fast rise time (tr) and fall time (tf). The gate driver should be capable of delivering a peak current of at least 1A to ensure the MOSFET is fully enhanced. Additionally, the gate resistor (Rg) should be minimized to reduce the gate charge time and minimize switching losses. A good starting point for Rg is around 10-20 ohms.
  • For optimal thermal performance, the SCT30N120 should be mounted on a PCB with a solid copper plane or a thermal pad to dissipate heat efficiently. The device should be placed near a heat sink or a thermal interface material (TIM) to further improve heat dissipation. A good PCB layout practice is to use a symmetrical layout with the MOSFET placed near the center of the board, and to minimize the distance between the MOSFET and the heat sink or TIM. Engineers should also ensure that the PCB is designed to minimize thermal resistance and maximize heat dissipation.
  • To protect the SCT30N120 from overvoltage and overcurrent conditions, engineers can implement various protection circuits and techniques. For overvoltage protection, a voltage clamp or a zener diode can be used to limit the voltage across the MOSFET. For overcurrent protection, a current sense resistor and a comparator can be used to detect excessive current and shut down the device. Additionally, a fuse or a polyfuse can be used to provide overcurrent protection. Engineers should also consider using a gate driver with built-in protection features, such as overcurrent and overvoltage protection.
  • The reliability and lifespan expectations for the SCT30N120 depend on various factors, including the operating conditions, thermal management, and quality of the device. According to the datasheet, the SCT30N120 has a typical lifetime of 100,000 hours at a junction temperature of 125°C. However, the actual lifespan can vary depending on the specific application and operating conditions. Engineers should consult the datasheet and application notes for more information on reliability and lifespan expectations.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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