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SCT50N120 - STMicroelectronics

Description: Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package

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SCT50N120 - STMicroelectronics - PCB symbol
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PCB Footprints
SCT50N120 - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HiP247 package
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SCT50N120 - STMicroelectronics - 3D model - Transistor Outline, Vertical - HiP247 package
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SCT50N120 Details

  • Manufacturer Part Number:

    SCT50N120

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Manufacturer Package Code:

    HiP247 IN LINE

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.69 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    318 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCT50N120 Frequently Asked Questions (FAQs)

  • The maximum SOA for the SCT50N120 is typically defined by the device's voltage and current ratings. For this device, the maximum voltage rating is 1200V and the maximum current rating is 50A. However, it's essential to consult the datasheet and application notes for specific guidance on SOA to ensure reliable operation.
  • To ensure proper cooling, consider the device's thermal resistance (Rth) and maximum junction temperature (Tj). For the SCT50N120, Rth(j-a) is 0.35°C/W and Tj(max) is 175°C. Use a suitable heat sink, ensure good thermal interface material (TIM) contact, and consider forced air cooling if necessary. Consult the datasheet and thermal management application notes for more information.
  • The SCT50N120 has an internal ESD protection diode, but it's still essential to follow proper ESD handling and storage procedures to prevent damage. Use ESD-safe materials, handle devices by the body or with a wrist strap, and store them in anti-static packaging. Consult the datasheet and ESD protection application notes for more information.
  • The SCT50N120 is suitable for high-frequency switching applications due to its low gate charge (Qg) and internal gate resistance (Rg). However, consider the device's switching characteristics, such as turn-on and turn-off times, and ensure proper gate drive and layout design to minimize ringing and oscillations.
  • When selecting a gate driver for the SCT50N120, consider the device's gate charge (Qg), gate-source voltage (Vgs), and switching frequency. Choose a gate driver with sufficient current capability, low output impedance, and suitable rise and fall times. Consult the datasheet and gate driver application notes for more information.

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SCT50N120 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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