Price & Stock for SCT50N120
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DigiKey
SICFET N-CH 1200V 65A HIP247
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT50N120 DISTI # 497-16598-5-NDSTMicroelectronics Tube 1 Compliant 228
Tube- 120 $16.87500
- 30 $18.96300
- 1 $29.35000
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Avnet Americas
- Rail/Tube (Alt: SCT50N120)
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT50N120 DISTI # SCT50N120STMicroelectronics Tube 600 Compliant 0 - 9600 $16.08000
- 4800 $16.36364
- 2400 $16.66667
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Newark
SIC MOSFET, N-CH, 1.2KV, 65A, HIP247-3; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Power Dissipation:318W RoHS Compliant: Yes
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT50N120 DISTI # 51AC9528STMicroelectronics Bulk 1 Compliant 0 Download SCT50N120 Model Download Datasheet -
STMicroelectronics
Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247 package
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT50N120 DISTI #STMicroelectronics 1 Compliant 329 - 100 $19.31000
- 10 $19.31000
- 1 $28.72000
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TME
Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 50A; Idm: 130A; 318W
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT50N120 DISTI # SCT50N120STMicroelectronics 1 Compliant 48 - 30 $25.37000
- 10 $25.38000
- 3 $26.67000
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ComSIT USA
Power Field-Effect Transistor, 65A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
MANUF PART NUMBER MANUFACTURER PACK SIZE MIN ORDER QTY LEAD TIME ROHS STOCK PRICE BUY SCT50N120 DISTI #STMicroelectronics Not Compliant Stock DE - 30 Stock ES - 0 Stock US - 0 Stock MX - 0 Stock CN - 0 Stock HK - 0 Download SCT50N120 Model Download Datasheet