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SCTH40N120G2V-7 - STMicroelectronics

Description: Silicon carbide Power MOSFET 1200 V, 70 mΩ typ., 36 A in an H²PAK-7 package

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SCTH40N120G2V-7 - STMicroelectronics PCB footprint - Other - Other - H2PAK-7_2
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SCTH40N120G2V-7 Details

  • Manufacturer Part Number:

    SCTH40N120G2V-7

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PSSO-G7

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Packing Method:

    TR, 13 INCH

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    238 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTH40N120G2V-7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTH40N120G2V-7 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • Proper thermal management is crucial for the SCTH40N120G2V-7. Ensure good thermal contact between the device and the heat sink, use a thermal interface material (TIM) if necessary, and design the heat sink to dissipate heat efficiently. The maximum junction temperature (Tj) should not exceed 150°C.
  • The recommended gate resistance value for the SCTH40N120G2V-7 is between 10 Ω and 100 Ω. A higher gate resistance can help reduce electromagnetic interference (EMI) and improve noise immunity, but may also increase switching times.
  • Yes, the SCTH40N120G2V-7 can be used in a parallel configuration to increase current handling capability. However, it's essential to ensure that the devices are matched in terms of characteristics, and that the gate drive and control circuits are designed to handle the parallel configuration.
  • The maximum allowable voltage transient for the SCTH40N120G2V-7 is ±10% of the rated voltage (1200 V). Exceeding this limit can lead to device failure or reduced lifespan.

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SCTH40N120G2V-7 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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