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SCTH70N120G2V-7 - STMicroelectronics

Description: Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK‑7 package

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SCTH70N120G2V-7 - STMicroelectronics - PCB symbol
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SCTH70N120G2V-7 - STMicroelectronics PCB footprint - Other - Other - H²PAK-7
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SCTH70N120G2V-7 - STMicroelectronics - 3D model - Other - H²PAK-7
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SCTH70N120G2V-7 Details

  • Manufacturer Part Number:

    SCTH70N120G2V-7

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.03 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    28 pF

  • JESD-30 Code:

    R-PSSO-G7

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    469 W

  • Pulsed Drain Current-Max (IDM):

    253 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTH70N120G2V-7 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the SCTH70N120G2V-7 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To minimize switching losses, ensure that the gate drive voltage is sufficient (typically 15V) and the gate resistance is low (typically <10 ohms). Also, use a gate driver with a high current capability to quickly charge and discharge the gate capacitance.
  • The recommended gate resistor value depends on the specific application and gate driver used. A typical value is around 10-20 ohms, but it's recommended to consult the gate driver datasheet and application notes for specific guidance.
  • Yes, the SCTH70N120G2V-7 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the IGBTs are matched in terms of characteristics, and the gate drive and thermal management are properly designed to handle the increased current.
  • A heat sink with a thermal resistance of <1°C/W is recommended for this IGBT. Ensure good thermal contact between the IGBT and heat sink, and consider using thermal interface materials to minimize thermal resistance.

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SCTH70N120G2V-7 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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