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SCTHS250N120G3AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 8.5 mOhm typ., 239 A in a STPAK package

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SCTHS250N120G3AG Details

  • Manufacturer Part Number:

    SCTHS250N120G3AG

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    239 A

  • Drain-source On Resistance-Max:

    0.0105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    56 pF

  • JESD-30 Code:

    R-XDSO-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    994 W

  • Pulsed Drain Current-Max (IDM):

    720 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTHS250N120G3AG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTHS250N120G3AG is -40°C to 150°C, as specified in the datasheet. However, it's essential to note that the device's performance and reliability may degrade at extreme temperatures.
  • To ensure proper thermal management, it's crucial to provide a suitable heat sink, ensure good thermal interface material (TIM) between the IGBT and heat sink, and maintain a low thermal resistance. Additionally, consider the maximum power dissipation and junction temperature to avoid overheating.
  • The recommended gate resistor value for the SCTHS250N120G3AG depends on the specific application and switching frequency. A general guideline is to use a gate resistor between 10 ohms to 100 ohms to ensure proper switching and minimize oscillations. However, it's recommended to consult the application note or contact STMicroelectronics for specific guidance.
  • Yes, the SCTHS250N120G3AG can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the IGBTs are properly matched, and the gate drive and thermal management are designed to accommodate the parallel configuration.
  • The maximum allowable voltage transient for the SCTHS250N120G3AG is specified in the datasheet as ±10% of the maximum rated voltage. However, it's recommended to consult the application note or contact STMicroelectronics for specific guidance on voltage transient tolerance.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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