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SCTW100N120G2AG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package

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SCTW100N120G2AG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HIP247-ren1
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SCTW100N120G2AG - STMicroelectronics  - 3D model - Transistor Outline, Vertical - HIP247-ren1
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SCTW100N120G2AG Details

  • Manufacturer Part Number:

    SCTW100N120G2AG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-05-25

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    565 W

  • Pulsed Drain Current-Max (IDM):

    228 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTW100N120G2AG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTW100N120G2AG is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -40°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material. The recommended thermal resistance (Rth) is ≤ 1.5 K/W. Additionally, ensure good airflow and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the SCTW100N120G2AG is between 10V to 15V, with a maximum of 20V. However, it's essential to check the specific application requirements and ensure the gate drive voltage is within the recommended range.
  • Yes, the SCTW100N120G2AG is suitable for high-frequency switching applications up to 100 kHz. However, it's crucial to consider the device's switching losses, thermal performance, and layout parasitics to ensure reliable operation.
  • To protect the SCTW100N120G2AG from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit. Additionally, ensure the device is operated within its specified ratings and follow proper PCB design guidelines.

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SCTW100N120G2AG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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