SCTW1 Model Download Search Results
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SCTW100N120G2AG
STMicroelectronics
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1 | Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mΩ (typ., TJ=25 °C), in an HiP247 package | Transistor Outline, Vertical | SCTW100N120G2AG |
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SCTW100N65G2AG
STMicroelectronics
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1 | Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 100 A in an HiP247 package | Transistor Outline, Vertical | SCTW100N65G2AG |
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SCTW100N65G2
STMicroelectronics
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1 | Power Field-Effect Transistor | SCTW100N65G2 |
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![Part Image](["https://componentsearchengine.com/2D/0T/5298727.4.1.png",null,null])
![Part Image](["https://componentsearchengine.com/Images/3/SCTW100N65G2AG.jpg",null,null])
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