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SCTW40N120G2V - STMicroelectronics

Description: Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package

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SCTW40N120G2V - STMicroelectronics - PCB symbol
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PCB Footprints
SCTW40N120G2V - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HIP247_2023
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3D Models
SCTW40N120G2V - STMicroelectronics - 3D model - Transistor Outline, Vertical - HIP247_2023
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SCTW40N120G2V Details

  • Manufacturer Part Number:

    SCTW40N120G2V

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Date Of Intro:

    2020-10-08

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    278 W

  • Pulsed Drain Current-Max (IDM):

    108 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTW40N120G2V Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTW40N120G2V is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet. Additionally, ensure that the gate-source voltage (Vgs) is within the recommended range of 0 to 15V, and the drain-source voltage (Vds) is within the recommended range of 0 to 1200V.
  • The recommended gate drive circuit for the SCTW40N120G2V is a bootstrap circuit with a high-voltage gate driver IC, such as the STMicroelectronics L6385 or L6391. This ensures proper gate-source voltage and current ratings are met, and minimizes switching losses.
  • Proper thermal management is crucial for the SCTW40N120G2V. Ensure good thermal contact between the device and a heat sink, and use thermal interface materials (TIMs) to minimize thermal resistance. Also, consider using a thermal monitoring system to prevent overheating.
  • The SCTW40N120G2V has built-in ESD protection, but it's still recommended to follow proper ESD handling procedures during assembly and testing. Use ESD-safe materials, wrist straps, and mats to prevent damage from electrostatic discharge.

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SCTW40N120G2V Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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