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SCTW40N120G2VAG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package .

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SCTW40N120G2VAG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HiP247
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3D Models
SCTW40N120G2VAG - STMicroelectronics  - 3D model - Transistor Outline, Vertical - HiP247
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SCTW40N120G2VAG Details

  • Manufacturer Part Number:

    SCTW40N120G2VAG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Date Of Intro:

    2019-05-31

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.105 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    290 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTW40N120G2VAG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTW40N120G2VAG is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings in the datasheet, and use a suitable gate driver circuit to minimize switching losses and ensure reliable operation.
  • For optimal thermal performance, use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure good thermal conductivity and minimize thermal resistance between the device and the heat sink.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or a current-sensing resistor, to prevent damage from voltage and current surges.
  • The recommended gate drive voltage is typically between 10-15V, and the current rating depends on the specific application, but a typical value is around 1-2A.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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