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SCTWA35N65G2V-4 - STMicroelectronics

Description: Silicon carbide Power MOSFET N-Channel 650 V, 55 mΩ typ., 45 A in an HiP247-4 package

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SCTWA35N65G2V-4 - STMicroelectronics PCB footprint - Other - Other - HiP247-4_2022
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SCTWA35N65G2V-4 - STMicroelectronics  - 3D model - Other - HiP247-4_2022
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SCTWA35N65G2V-4 Details

  • Manufacturer Part Number:

    SCTWA35N65G2V-4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTWA35N65G2V-4 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTWA35N65G2V-4 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's performance at higher temperatures to ensure reliability and longevity.
  • To ensure SOA compliance, you should follow the guidelines provided in the datasheet, including limiting the voltage and current within the specified ratings, and ensuring that the device is not operated in a region where the voltage and current exceed the maximum ratings simultaneously.
  • For optimal performance and thermal management, it's recommended to follow the PCB layout guidelines provided in the datasheet, including using a thermal pad, placing the device on a copper plane, and ensuring good thermal conductivity between the device and the heat sink or PCB.
  • To handle ESD protection, it's recommended to follow the guidelines provided in the datasheet, including using ESD protection devices, such as TVS diodes or ESD protection ICs, and following proper handling and storage procedures to prevent ESD damage.
  • The recommended gate drive circuits and components for the SCTWA35N65G2V-4 are typically dependent on the specific application and requirements. However, a general guideline is to use a gate driver IC with a suitable output current and voltage rating, and to ensure that the gate drive circuit is properly decoupled and filtered to prevent noise and oscillations.

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SCTWA35N65G2V-4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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