SCTWA Model Download Search Results
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SCTWA10N120
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 12 A, 550 mOhm (typ., TJ = 150 C) in an HiP247 long leads package | Transistor Outline, Vertical | SCTWA10N120 |
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SCTWA70N120G2V
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package | Other | SCTWA70N120G2V |
3
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SCTWA35N65G2VAG
STMicroelectronics
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1 | Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package | Transistor Outline, Vertical | SCTWA35N65G2VAG |
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SCTWA40N12G24AG
STMicroelectronics
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1 | Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247‑4 package | Other | SCTWA40N12G24AG |
3
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SCTWA40N120G2V-4
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package | Other | SCTWA40N120G2V-4 |
3
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SCTWA70N120G2V-4
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247-4 package | Other | SCTWA70N120G2V-4 |
3
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SCTWA35N65G2V
STMicroelectronics
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1 | Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package | Transistor Outline, Vertical | SCTWA35N65G2V |
3
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SCTWA50N120-4
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247-4 package | Other | SCTWA50N120-4 |
3
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SCTWA60N120G2AG
STMicroelectronics
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1 | Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247 long leads package | Transistor Outline, Vertical | SCTWA60N120G2AG |
3
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SCTWA35N65G2V-4
STMicroelectronics
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1 | Silicon carbide Power MOSFET N-Channel 650 V, 55 mΩ typ., 45 A in an HiP247-4 package | Other | SCTWA35N65G2V-4 |
3
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SCTWA90N65G2V
STMicroelectronics
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1 | Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247 long leads package | Transistor Outline, Vertical | SCTWA90N65G2V |
3
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SCTWA40N120G2AG
STMicroelectronics
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1 | Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package | Transistor Outline, Vertical | SCTWA40N120G2AG |
3
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SCTWA90N65G2V-4
STMicroelectronics
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1 | Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package | Other | SCTWA90N65G2V-4 |
3
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SCTWA60N12G2-4AG
STMicroelectronics
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1 | Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mOhm typ., 52 A in an HiP247-4 package/02 | Other | SCTWA60N12G2-4AG |
3
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SCTWA60N120G2-4
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package | Other | SCTWA60N120G2-4 |
3
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SCTWA50N120
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 52 mΩ typ., 65 A in an HiP247 long leads package | Transistor Outline, Vertical | SCTWA50N120 |
3
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SCTWA40N120G2V
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package | Transistor Outline, Vertical | SCTWA40N120G2V |
3
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SCTWA30N120
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 long leads package | Transistor Outline, Vertical | SCTWA30N120 |
3
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SCTWA20N120
STMicroelectronics
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1 | Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C) N-channel in a HiP247 long leads package | Transistor Outline, Vertical | SCTWA20N120 |
3
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SCTWA35N65G2V4AG
STMicroelectronics
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1 | Power Field-Effect Transistor, 45A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | SCTWA35N65G2V4AG |
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![Part Image](["https://componentsearchengine.com/Images/1/SCTWA10N120.jpg",null,null])
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![Part Image](["https://componentsearchengine.com/Images/1/SCTWA30N120.jpg",null,null])
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