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SCTWA35N65G2V - STMicroelectronics

Description: Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package

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SCTWA35N65G2V - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HiP247 long leads package information-
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SCTWA35N65G2V - STMicroelectronics  - 3D model - Transistor Outline, Vertical - HiP247 long leads package information-
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SCTWA35N65G2V Details

  • Manufacturer Part Number:

    SCTWA35N65G2V

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTWA35N65G2V Frequently Asked Questions (FAQs)

  • The maximum operating junction temperature of the SCTWA35N65G2V is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Additionally, consider the application's specific requirements and consult with STMicroelectronics' application notes and technical support if needed.
  • For optimal thermal management, use a PCB layout that allows for good heat dissipation, such as using thermal vias and a heat sink. Follow STMicroelectronics' recommended PCB layout guidelines and thermal management strategies outlined in their application notes and technical documentation.
  • To protect the SCTWA35N65G2V from ESD, follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging. Ensure that the device is properly grounded during assembly and testing, and consider using ESD protection devices in the circuit design.
  • The SCTWA35N65G2V meets various reliability and quality standards, including AEC-Q101, IEC 60747, and ISO 9001. Consult STMicroelectronics' documentation and technical support for specific information on the device's compliance with these standards.

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SCTWA35N65G2V Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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