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Power Field-Effect Transistor, 65A I(D), 1200V, 0.069ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

MANUF PART NUMBER	MANUFACTURER	PACK SIZE	MIN ORDER QTY	LEAD TIME	ROHS	STOCK	PRICE	BUY
SCTWA50N120-4 DISTI #	STMicroelectronics				Compliant	2676
Download SCTWA50N120-4 Model Download Datasheet