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SCTWA50N120-4 - STMicroelectronics

Description: Silicon carbide Power MOSFET 1200 V, 52 mOhm typ., 65 A in an HiP247-4 package

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SCTWA50N120-4 Details

  • Manufacturer Part Number:

    SCTWA50N120-4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    65 A

  • Drain-source On Resistance-Max:

    0.069 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PSFM-T4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    318 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTWA50N120-4 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTWA50N120-4 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to derate the device's performance at higher temperatures to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 250W for the SCTWA50N120-4. Additionally, ensure good airflow around the heat sink to prevent thermal throttling.
  • The recommended gate drive voltage for the SCTWA50N120-4 is between 10V and 15V, with a maximum gate-source voltage of ±20V. Using a gate drive voltage within this range ensures proper switching and minimizes the risk of device damage.
  • Yes, the SCTWA50N120-4 can be used in a parallel configuration to increase current handling. However, it's crucial to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential device damage.
  • The maximum allowed voltage transient for the SCTWA50N120-4 is 120% of the maximum rated voltage, which is 600V for this device. Exceeding this limit can cause device damage or failure.

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SCTWA50N120-4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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