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SCTWA35N65G2VAG - STMicroelectronics

Description: Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package

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SCTWA35N65G2VAG - STMicroelectronics - PCB symbol
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SCTWA35N65G2VAG - STMicroelectronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - HiP247 long leads package information-
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SCTWA35N65G2VAG - STMicroelectronics - 3D model - Transistor Outline, Vertical - HiP247 long leads package information-
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SCTWA35N65G2VAG Details

  • Manufacturer Part Number:

    SCTWA35N65G2VAG

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-08-12

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    45 A

  • Drain-source On Resistance-Max:

    0.067 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    30 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    240 W

  • Pulsed Drain Current-Max (IDM):

    90 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTWA35N65G2VAG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SCTWA35N65G2VAG is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure safe operating area (SOA) for the SCTWA35N65G2VAG, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider factors like thermal management, PCB design, and component selection to prevent overheating and electrical overstress.
  • The recommended gate drive voltage for the SCTWA35N65G2VAG is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but be cautious of gate oxide breakdown and ensure proper gate drive circuit design.
  • To handle ESD protection for the SCTWA35N65G2VAG, follow proper handling and storage procedures to prevent electrostatic discharge. Implement ESD protection circuits, such as TVS diodes or ESD protection arrays, in your design to protect the MOSFET from voltage transients and surges.
  • The maximum allowed drain-source voltage (Vds) for the SCTWA35N65G2VAG is 650V. Exceeding this voltage can lead to MOSFET failure or damage. Ensure your design operates within the specified voltage range to maintain reliability and performance.

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SCTWA35N65G2VAG Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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