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SCTWA40N120G2V-4 - STMicroelectronics

Description: Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247-4 package

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SCTWA40N120G2V-4 Details

  • Manufacturer Part Number:

    SCTWA40N120G2V-4

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    32 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    200 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    277 W

  • Pulsed Drain Current-Max (IDM):

    107 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

SCTWA40N120G2V-4 Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a dedicated application note (AN5046) that outlines the recommended PCB layout and thermal management guidelines for the SCTWA40N120G2V-4. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
  • When selecting a gate driver for the SCTWA40N120G2V-4, consider factors such as the driver's output current, voltage rating, and propagation delay. STMicroelectronics recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the IGBT's gate-emitter voltage. The L639x or STGAP2SiCSN gate driver series from STMicroelectronics are suitable options.
  • The SCTWA40N120G2V-4 has a maximum allowed overcurrent of 2.5 times the nominal current (120A) for a short duration (typically 10μs). To protect the IGBT module from overcurrent conditions, implement overcurrent detection and protection circuits, such as a shunt resistor and a comparator, or use a dedicated overcurrent protection IC.
  • To ensure EMC and reduce EMI, follow best practices for PCB layout, such as separating high-frequency and low-frequency circuits, using shielding, and implementing filtering and decoupling techniques. Additionally, consider using a metal case or shield around the IGBT module and connecting it to the system's ground. STMicroelectronics provides guidelines for EMC and EMI reduction in their application notes and technical documentation.
  • The SCTWA40N120G2V-4 is designed to meet high reliability and lifetime expectations. STMicroelectronics provides a calculation tool for estimating the module's lifetime based on factors such as operating temperature, voltage, and current. The module's reliability is also ensured through rigorous testing and qualification processes, including JEDEC and IEC standards.

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SCTWA40N120G2V-4 Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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