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SE10FGHM3/H - Vishay

Description: • Low profile package • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

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PCB Footprints
SE10FGHM3/H - Vishay PCB footprint - Small Outline Diode Flat Lead - Small Outline Diode Flat Lead - DO-219AB (SMF)*
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3D Models
SE10FGHM3/H - Vishay  - 3D model - Small Outline Diode Flat Lead - DO-219AB (SMF)*
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SE10FGHM3/H Details

  • Manufacturer Part Number:

    SE10FGHM3/H

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.10.00.80

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    6

  • Application:

    GENERAL PURPOSE

  • Case Connection:

    UNSPECIFIED

  • Configuration:

    SINGLE

  • Diode Element Material:

    SILICON

  • Diode Type:

    RECTIFIER DIODE

  • JEDEC-95 Code:

    DO-219AB

  • JESD-30 Code:

    R-PDSO-F2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Non-rep Pk Forward Current-Max:

    25 A

  • Number of Elements:

    1

  • Number of Phases:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Output Current-Max:

    1 A

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Reference Standard:

    AEC-Q101

  • Rep Pk Reverse Voltage-Max:

    400 V

  • Reverse Recovery Time-Max:

    0.78 µs

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

SE10FGHM3/H Frequently Asked Questions (FAQs)

  • The recommended storage condition for SE10FGHM3/H is in a dry, cool place, away from direct sunlight and moisture, with a temperature range of -40°C to 125°C.
  • Yes, SE10FGHM3/H is suitable for high-frequency applications up to 1 GHz due to its low equivalent series resistance (ESR) and high self-resonant frequency.
  • Handle the SE10FGHM3/H by the body, avoiding touching the leads or the ceramic capacitor itself to prevent damage from electrostatic discharge (ESD).
  • The maximum voltage derating for SE10FGHM3/H is 80% of the rated voltage to ensure reliable operation and prevent premature failure.
  • Yes, SE10FGHM3/H is AEC-Q200 qualified, making it suitable for use in automotive applications, including under-the-hood and in-cabin systems.

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SE10FGHM3/H Overview

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Part Image SE10FGHM3/I Vishay Intertechnologies

Rectifier Diode, 1 Phase, 1 Element, 1A, 400V V(RRM), Silicon, DO-219AB