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SGS10N60RUFDTU - onsemi

Description: IGBT, 600V, 10A, Short Circuit Rated

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SGS10N60RUFDTU - onsemi  - 3D model
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SGS10N60RUFDTU Details

  • Manufacturer Part Number:

    SGS10N60RUFDTU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220-3 FullPak

  • Manufacturer Package Code:

    221AT

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    16 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Fall Time-Max (tf):

    220 ns

  • Gate-Emitter Thr Voltage-Max:

    8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    MOTOR CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    284 ns

  • Turn-on Time-Nom (ton):

    49 ns

SGS10N60RUFDTU Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the SGS10N60RUFDTU can withstand is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material, such as thermal grease or thermal tape, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate drive voltage for the SGS10N60RUFDTU is between 10V and 15V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements, as excessive gate voltage can damage the device.
  • Yes, the SGS10N60RUFDTU is suitable for high-frequency switching applications. However, it's crucial to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is designed to minimize switching losses and prevent oscillations.
  • To protect the SGS10N60RUFDTU from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit voltage spikes. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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SGS10N60RUFDTU Overview

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