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SGT120R65AL - STMicroelectronics

Description: 650 V, 75 mOhm typ., 15 A, e-mode PowerGaN transistor

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PCB Footprints
SGT120R65AL - STMicroelectronics PCB footprint - Other - Other - PowerFLAT 5x6 HV for PowerGaN
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3D Models
SGT120R65AL - STMicroelectronics  - 3D model - Other - PowerFLAT 5x6 HV for PowerGaN
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SGT120R65AL Details

  • Manufacturer Part Number:

    SGT120R65AL

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    22 Weeks

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Additional Feature:

    BULK: 3000

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    HIGH ELECTRON MOBILITY

  • Feedback Cap-Max (Crss):

    0.9 pF

  • JESD-30 Code:

    R-PDSO-F8

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    4.8 W

  • Power Dissipation-Max (Abs):

    192 W

  • Pulsed Drain Current-Max (IDM):

    36 A

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    GALLIUM NITRIDE

SGT120R65AL Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the SGT120R65AL is -40°C to 150°C, with a junction temperature (TJ) of up to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within the recommended operating temperature range.
  • The recommended gate drive voltage for the SGT120R65AL is between 10V and 15V, with a maximum gate-source voltage (VGS) of ±20V.
  • Yes, the SGT120R65AL can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The typical turn-on time (ton) for the SGT120R65AL is around 10ns, and the typical turn-off time (toff) is around 20ns, but these values can vary depending on the specific application and operating conditions.

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SGT120R65AL Overview

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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